发明申请
US20090045468A1 TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION
有权
TRENCH分离和制备TRENCH隔离的方法
- 专利标题: TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION
- 专利标题(中): TRENCH分离和制备TRENCH隔离的方法
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申请号: US11839585申请日: 2007-08-16
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公开(公告)号: US20090045468A1公开(公告)日: 2009-02-19
- 发明人: Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
- 申请人: Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L21/8238
摘要:
Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
公开/授权文献
- US08012848B2 Trench isolation and method of fabricating trench isolation 公开/授权日:2011-09-06