发明申请
- 专利标题： Semiconductor Device and Manufacturing Method Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12084619申请日： 2006-10-18
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公开(公告)号： US20090045469A1公开(公告)日： 2009-02-19
- 发明人: Kensuke Takahashi
- 申请人： Kensuke Takahashi
- 优先权： JP2005-341906 20051128
- 国际申请： PCT/JP2006/320740 WO 20061018
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/336 ; H01L21/8234
摘要：
A semiconductor device including a silicon substrate; a gate insulating film on the silicon substrate; a gate electrode on the gate insulating film; and source/drain regions formed in the substrate on both sides of the gate electrode, wherein the gate electrode includes a first silicide layered region formed of a silicide of a metal M1; and a second silicide layered region on the first silicide layered region, the second silicide layered region being formed of a silicide of the same metal as the metal M1 and being lower in resistivity than the first silicide layered region.
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