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发明申请
US20090045482A1 Shallow Trench Isolation with Improved Structure and Method of Forming 有权
浅沟槽隔离与改进的结构和形成方法

Shallow Trench Isolation with Improved Structure and Method of Forming
摘要：
A shallow trench isolation (STI) structure has a top portion tapering in width from wide to narrow in a direction from a substrate surface, from a first width at a top of the first portion to a second width at a bottom of the first portion. The STI structure also includes a bottom portion below the top portion, which expands from the bottom of the top portion to a substantially widened lateral distance having a third width. The third width is, in general, substantially larger than the second width. The inventive STI structure can provide desired isolation characteristics with a significantly reduced aspect ratio, thus suitable for device isolations in advanced processing technology.
摘要（中）：

浅沟槽隔离（STI）结构具有在从基板表面的方向上从宽到窄的宽度从第一部分的顶部处的第一宽度到第一部分的底部处的第二宽度的顶部部分。 STI结构还包括在顶部下方的底部，其从顶部的底部膨胀到具有第三宽度的基本上加宽的横向距离。 通常，第三宽度基本上大于第二宽度。 本发明的STI结构可以提供期望的隔离特性，具有显着减小的纵横比，因此适用于先进加工技术中的器件隔离。

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