发明申请
- 专利标题： INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 集成半导体激光器件及其制造方法
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申请号： US12256854申请日： 2008-10-23
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公开(公告)号： US20090046755A1公开(公告)日： 2009-02-19
- 发明人: Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
- 申请人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
- 申请人地址： JP Osaka
- 专利权人： SANYO ELECTRIC CO., LTD.
- 当前专利权人： SANYO ELECTRIC CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JPJP2004-276457 20040924; JPJP2005-093234 20050328
- 主分类号： H01S5/026
- IPC分类号： H01S5/026
摘要：
An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.