发明申请
US20090050956A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
半导体存储器件及其制造方法
- 专利标题: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US12191958申请日: 2008-08-14
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公开(公告)号: US20090050956A1公开(公告)日: 2009-02-26
- 发明人: TETSUYA ISHIMARU , YOSHIYUKI KAWASHIMA , YASUHIRO SHIMAMOTO , KAN YASUI , TSUYOSHI ARIGANE , TOSHIYUKI MINE
- 申请人: TETSUYA ISHIMARU , YOSHIYUKI KAWASHIMA , YASUHIRO SHIMAMOTO , KAN YASUI , TSUYOSHI ARIGANE , TOSHIYUKI MINE
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 优先权: JPJP2007-218498 20070824
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L21/336
摘要:
In a memory cell including an nMIS for memory formed on the sides of an nMIS for select and an nMIS for select via dielectric films and a charge storage layer, the thickness of a gate dielectric under the gate longitudinal direction end of a select gate electrode is formed thicker than that of the gate dielectric under the gate longitudinal direction center and the thickness of the lower layer dielectric film that is positioned between the select gate electrode and the charge storage layer and is nearest to a semiconductor substrate is formed 1.5 times or below of the thickness of the lower layer dielectric film positioned between the semiconductor substrate and the charge storage layer.