发明申请
- 专利标题: ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS
- 专利标题(中): 原子层沉积材料
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申请号: US12121209申请日: 2008-05-15
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公开(公告)号: US20090053893A1公开(公告)日: 2009-02-26
- 发明人: Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
- 申请人: Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.
公开/授权文献
- US07964505B2 Atomic layer deposition of tungsten materials 公开/授权日:2011-06-21