发明申请
US20090053978A1 Double-Disc Grinding Machine, Static Pressure Pad, and Double-Disc Grinding Method Using the Same for Semiconductor Wafer 有权
双盘磨床,静压垫和双盘磨削方法使用它的半导体晶片

  • 专利标题: Double-Disc Grinding Machine, Static Pressure Pad, and Double-Disc Grinding Method Using the Same for Semiconductor Wafer
  • 专利标题(中): 双盘磨床,静压垫和双盘磨削方法使用它的半导体晶片
  • 申请号: US12086029
    申请日: 2006-11-01
  • 公开(公告)号: US20090053978A1
    公开(公告)日: 2009-02-26
  • 发明人: Hiroshi OishiKenji Kobayashi
  • 申请人: Hiroshi OishiKenji Kobayashi
  • 申请人地址: JP TOKYO
  • 专利权人: SHIN-ETSU HANDOTAI CO., LTD
  • 当前专利权人: SHIN-ETSU HANDOTAI CO., LTD
  • 当前专利权人地址: JP TOKYO
  • 优先权: JP2005-355294 20051208
  • 国际申请: PCT/JP2006/321845 WO 20061101
  • 主分类号: B24B1/00
  • IPC分类号: B24B1/00 B24B7/17 B24B41/06
Double-Disc Grinding Machine, Static Pressure Pad, and Double-Disc Grinding Method Using the Same for Semiconductor Wafer
摘要:
The present invention is a static pressure pad for supporting both sides of a raw wafer without contact by a static pressure of a fluid supplied to the both sides of the raw wafer in a double-disc grinding machine for a semiconductor wafer, wherein in patterns of lands to be banks of surrounding pockets formed on a surface side of supporting the raw wafer of the static pressure pad, an outer circumferential land pattern required to support the raw wafer is a concentric circle with respect to a rotation center of the raw wafer, and a land pattern inside the outer circumferential land pattern is a non-concentric circle with respect to the rotation center of the raw wafer and asymmetrical with respect to all the straight lines which bisect the static pressure pad. With this static pressure pad, there is provided the double-disc grinding machine and a double-disc grinding method for the semiconductor wafer, which can minimize a “middle ring” of average components obtained by averaging a nanotopography of the wafers after the double-disc grinding.
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