发明申请
- 专利标题: SIMULATION METHOD AND SIMULATION PROGRAM
- 专利标题(中): 模拟方法和仿真程序
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申请号: US12192179申请日: 2008-08-15
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公开(公告)号: US20090055143A1公开(公告)日: 2009-02-26
- 发明人: Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
- 申请人: Takashi Ichikawa , Naoki Tamaoki , Toshiro Takase
- 优先权: JP2007-212418 20070816
- 主分类号: G06F17/10
- IPC分类号: G06F17/10
摘要:
A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.
公开/授权文献
- US08209155B2 Simulation method and simulation program 公开/授权日:2012-06-26