发明申请
US20090056627A1 METHOD AND APPARATUS FOR MONITORING PLASMA-INDUCED DAMAGE USING DC FLOATING POTENTIAL OF SUBSTRATE
审中-公开
使用基板的直流浮动电位监测等离子体诱导损伤的方法和装置
- 专利标题: METHOD AND APPARATUS FOR MONITORING PLASMA-INDUCED DAMAGE USING DC FLOATING POTENTIAL OF SUBSTRATE
- 专利标题(中): 使用基板的直流浮动电位监测等离子体诱导损伤的方法和装置
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申请号: US11847962申请日: 2007-08-30
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公开(公告)号: US20090056627A1公开(公告)日: 2009-03-05
- 发明人: Mitsutoshi SHUTO , Yasushi FUKASAWA , Yasuaki SUZUKI
- 申请人: Mitsutoshi SHUTO , Yasushi FUKASAWA , Yasuaki SUZUKI
- 申请人地址: JP Tokyo
- 专利权人: ASM JAPAN K.K.
- 当前专利权人: ASM JAPAN K.K.
- 当前专利权人地址: JP Tokyo
- 主分类号: B05C11/00
- IPC分类号: B05C11/00 ; G01N27/66 ; G01R29/12
摘要:
A method for monitoring plasma-induced damage to a substrate while being processed in a plasma CVD apparatus includes: measuring DC floating potential of the substrate using a detection electrode in contact with the substrate while the substrate is processed in the apparatus; and detecting abnormality as plasma-induced damage based on the measured DC floating potential.
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