发明申请
US20090058517A1 High Voltage Tolerant Input Buffer 有权
高电压容限输入缓冲器

  • 专利标题: High Voltage Tolerant Input Buffer
  • 专利标题(中): 高电压容限输入缓冲器
  • 申请号: US11850667
    申请日: 2007-09-05
  • 公开(公告)号: US20090058517A1
    公开(公告)日: 2009-03-05
  • 发明人: Chia-Hui Chen
  • 申请人: Chia-Hui Chen
  • 主分类号: G05F3/02
  • IPC分类号: G05F3/02
High Voltage Tolerant Input Buffer
摘要:
An input buffer protection circuit is disclosed which comprises a NMOS transistor with a source, drain and gate coupled to an input terminal of the input buffer, a pad and a chip peripheral positive power supply voltage (VDDP), respectively, and a PMOS transistor with a source, drain and gate coupled to the pad, the input terminal of the input buffer and a first terminal of a biasing circuit, respectively, wherein the biasing circuit has a second terminal coupled to the pad and generates at the first terminal a voltage lower than the pad's input signal voltage (VPAD) to turn on the PMOS transistor when the VPAD is lower than or equal to the VDDP, or a voltage substantial equals to the VPAD to turn off the PMOS transistor when the VPAD is higher than the VDDP.
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