发明申请
- 专利标题: High Voltage Tolerant Input Buffer
- 专利标题(中): 高电压容限输入缓冲器
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申请号: US11850667申请日: 2007-09-05
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公开(公告)号: US20090058517A1公开(公告)日: 2009-03-05
- 发明人: Chia-Hui Chen
- 申请人: Chia-Hui Chen
- 主分类号: G05F3/02
- IPC分类号: G05F3/02
摘要:
An input buffer protection circuit is disclosed which comprises a NMOS transistor with a source, drain and gate coupled to an input terminal of the input buffer, a pad and a chip peripheral positive power supply voltage (VDDP), respectively, and a PMOS transistor with a source, drain and gate coupled to the pad, the input terminal of the input buffer and a first terminal of a biasing circuit, respectively, wherein the biasing circuit has a second terminal coupled to the pad and generates at the first terminal a voltage lower than the pad's input signal voltage (VPAD) to turn on the PMOS transistor when the VPAD is lower than or equal to the VDDP, or a voltage substantial equals to the VPAD to turn off the PMOS transistor when the VPAD is higher than the VDDP.
公开/授权文献
- US07564287B2 High voltage tolerant input buffer 公开/授权日:2009-07-21
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