发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12203982申请日： 2008-09-04
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公开(公告)号： US20090065933A1公开(公告)日： 2009-03-12
- 发明人: Hideki Takehara , Yoshihiro Tomita , Seiji Fujiwara , Takahiro Nakano , Hikari Sano
- 申请人： Hideki Takehara , Yoshihiro Tomita , Seiji Fujiwara , Takahiro Nakano , Hikari Sano
- 申请人地址： JP Kadoma-shi
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Kadoma-shi
- 优先权： JP2007-232115 20070907
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/44
摘要：
The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.
公开/授权文献
- US07960271B2 Semiconductor device and method of manufacturing the same 公开/授权日：2011-06-14
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