发明申请
- 专利标题： Method for fabricating semiconductor device and semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US12232453申请日： 2008-09-17
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公开(公告)号： US20090065946A1公开(公告)日： 2009-03-12
- 发明人: Akihiro Kojima
- 申请人： Akihiro Kojima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-082325 20050322
- 主分类号： H01L23/535
- IPC分类号： H01L23/535
摘要：
A method of fabricating a semiconductor device having an air-gapped multilayer interconnect wiring structure is disclosed. After having formed a first thin film on or above a substrate, define a first opening in the first thin film. Then, deposit a conductive material in the first opening. Then form a second thin film made of a porous material above the first thin film with the conductive material being deposited in the first opening. Next, define in the second thin film a second opening extending therethrough, followed by deposition of a conductive material in the second opening. The first thin film is removed through voids in the second thin film after having deposited the conductive material in the second opening. An integrated semiconductor device as manufactured thereby is also disclosed.
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