发明申请
US20090066371A1 BUFFER CIRCUIT WHICH OCCUPIES LESS AREA IN A SEMICONDUCTOR DEVICE 失效
在半导体器件中占用较少区域的缓冲电路

  • 专利标题: BUFFER CIRCUIT WHICH OCCUPIES LESS AREA IN A SEMICONDUCTOR DEVICE
  • 专利标题(中): 在半导体器件中占用较少区域的缓冲电路
  • 申请号: US11964243
    申请日: 2007-12-26
  • 公开(公告)号: US20090066371A1
    公开(公告)日: 2009-03-12
  • 发明人: Je Yoon KIMJong Chern LEE
  • 申请人: Je Yoon KIMJong Chern LEE
  • 优先权: KR10-2007-0091786 20070910
  • 主分类号: H03K3/00
  • IPC分类号: H03K3/00
BUFFER CIRCUIT WHICH OCCUPIES LESS AREA IN A SEMICONDUCTOR DEVICE
摘要:
The present invention relates to a buffer circuit of a semiconductor memory device, and includes a common bias supply unit and a plurality of interface units having a differential amplifying structure. Each interface unit receives an input signal and differentially amplifies the input signal and a common bias. The common bias supply unit is driven by a reference voltage to provide the common bias signal to each of the interface units. The buffer circuit makes it possible to reduce the area occupied by the buffer circuit in a semiconductor memory device.
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