发明申请
US20090066371A1 BUFFER CIRCUIT WHICH OCCUPIES LESS AREA IN A SEMICONDUCTOR DEVICE
失效
在半导体器件中占用较少区域的缓冲电路
- 专利标题: BUFFER CIRCUIT WHICH OCCUPIES LESS AREA IN A SEMICONDUCTOR DEVICE
- 专利标题(中): 在半导体器件中占用较少区域的缓冲电路
-
申请号: US11964243申请日: 2007-12-26
-
公开(公告)号: US20090066371A1公开(公告)日: 2009-03-12
- 发明人: Je Yoon KIM , Jong Chern LEE
- 申请人: Je Yoon KIM , Jong Chern LEE
- 优先权: KR10-2007-0091786 20070910
- 主分类号: H03K3/00
- IPC分类号: H03K3/00
摘要:
The present invention relates to a buffer circuit of a semiconductor memory device, and includes a common bias supply unit and a plurality of interface units having a differential amplifying structure. Each interface unit receives an input signal and differentially amplifies the input signal and a common bias. The common bias supply unit is driven by a reference voltage to provide the common bias signal to each of the interface units. The buffer circuit makes it possible to reduce the area occupied by the buffer circuit in a semiconductor memory device.
公开/授权文献
信息查询