发明申请
US20090067771A1 High Efficient Silicon-on-Lithium Niobate Modulator 有权
高效硅铌酸锂调制器

High Efficient Silicon-on-Lithium Niobate Modulator
摘要:
A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the Vπ·L product of the modulator.
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