发明申请
- 专利标题: High Efficient Silicon-on-Lithium Niobate Modulator
- 专利标题(中): 高效硅铌酸锂调制器
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申请号: US12207488申请日: 2008-09-09
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公开(公告)号: US20090067771A1公开(公告)日: 2009-03-12
- 发明人: Jianxiao Chen , Charles Cox
- 申请人: Jianxiao Chen , Charles Cox
- 申请人地址: US MA Billerica
- 专利权人: PHOTONIC SYSTEMS, INC.
- 当前专利权人: PHOTONIC SYSTEMS, INC.
- 当前专利权人地址: US MA Billerica
- 主分类号: G02F1/035
- IPC分类号: G02F1/035 ; H01L21/02
摘要:
A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the Vπ·L product of the modulator.
公开/授权文献
- US07970241B2 High efficient silicon-on-lithium niobate modulator 公开/授权日:2011-06-28
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