发明申请
US20090070523A1 Flash memory device storing data with multi-bit and single-bit forms and programming method thereof
审中-公开
闪存器件以多位和单位形式存储数据及其编程方法
- 专利标题: Flash memory device storing data with multi-bit and single-bit forms and programming method thereof
- 专利标题(中): 闪存器件以多位和单位形式存储数据及其编程方法
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申请号: US12230336申请日: 2008-08-27
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公开(公告)号: US20090070523A1公开(公告)日: 2009-03-12
- 发明人: Hyung-Min Kim , Ho-Kil Lee , Eun-Kyoung Kim
- 申请人: Hyung-Min Kim , Ho-Kil Lee , Eun-Kyoung Kim
- 优先权: KR10-2007-0086072 20070827
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/00
摘要:
A flash memory device may include a memory cell array including a plurality of memory blocks and a partition information block, the partition information block storing partition information that indicates a boundary between multi-bit memory blocks and single-bit memory blocks among the memory blocks. The memory device may include a control logic configured to determining whether a memory block that a block address from the outside indicates has a multi-bit form or a single-bit form based on the partition information and to control program and read operations in a multi-bit form or a single-bit form based on a determination result. The control logic automatically programs data in the partition information block according to whether a fuse connected to the control logic fuse is cut or not, the data being used for preventing the partition information block from being programmed or erased.
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