发明申请
- 专利标题： METHOD OF FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR
- 专利标题（中）： 制备异相双极晶体管的方法
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申请号： US11911620申请日： 2006-04-03
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公开(公告)号： US20090075446A1公开(公告)日： 2009-03-19
- 发明人: Philippe Meunier-Beillard , Johannes J.T.M. Donkers , Hijzen Erwin , Melai Joost
- 申请人： Philippe Meunier-Beillard , Johannes J.T.M. Donkers , Hijzen Erwin , Melai Joost
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP05102910.6 20050413
- 国际申请： PCT/IB2006/051005 WO 20060403
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region (23), which is formed self-aligned to a base region (7) without applying photolithographic techniques. Further, a collector connecting region (31) and an emitter region (29) are formed simultaneously and self-aligned to the base connecting region (23) without applying photolithographic techniques.
公开/授权文献
- US07618858B2 Method of fabricating a heterojunction bipolar transistor 公开/授权日：2009-11-17
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