发明申请
- 专利标题： Reactive Ion Etching Process for Etching Metals
- 专利标题（中）： 腐蚀金属的反应离子蚀刻工艺
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申请号： US11861282申请日： 2007-09-26
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公开(公告)号： US20090078674A1公开(公告)日： 2009-03-26
- 发明人: Darrell LaRue McReynolds , Lakshmi C.S. , Kia Silverbrook
- 申请人： Darrell LaRue McReynolds , Lakshmi C.S. , Kia Silverbrook
- 专利权人： Silverbrook Research Pty Ltd
- 当前专利权人： Silverbrook Research Pty Ltd
- 主分类号： C03C25/68
- IPC分类号： C03C25/68 ; C23F1/00 ; G01D15/00
摘要：
A method of etching a metal by a reactive ion etching process is provided. The etchant gas chemistry for the reactive ion etching process consists essentially of NH3. The process is particularly suitable for etching superalloys, which etch only slowly using conventional metal etching techniques.
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