发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12194915申请日： 2008-08-20
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公开(公告)号： US20090078988A1公开(公告)日： 2009-03-26
- 发明人: Yuichiro Higuchi , Keita Takahashi
- 申请人： Yuichiro Higuchi , Keita Takahashi
- 优先权： JP2007-245928 20070921
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
摘要：
A semiconductor device includes a protection target element formed on a semiconductor substrate and includes a protection target element electrode, a substrate connecting part including a substrate connecting electrode electrically connected to the semiconductor substrate and a fuse structure provided between the protection target element electrode and the substrate connecting electrode and includes a fuse film configured to be torn by applying a predetermined current thereto. The protection target element electrode, the substrate connecting electrode and the fuse film are formed of an integral conductive film as long as the fuse film is not torn.
公开/授权文献
- US07821100B2 Semiconductor device and method for manufacturing the same 公开/授权日：2010-10-26
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