发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12211925申请日： 2008-09-17
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公开(公告)号： US20090079007A1公开(公告)日： 2009-03-26
- 发明人: TADASHI YAMAGUCHI , Keiichiro Kashihara , Toshiaki Tsutsumi , Tomonori Okudaira
- 申请人： TADASHI YAMAGUCHI , Keiichiro Kashihara , Toshiaki Tsutsumi , Tomonori Okudaira
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2007-244988 20070921
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/8238
摘要：
The present invention can prevent occurrence of an off-leak current in the NMISFETs formed over the Si (110) substrate and having a silicided source/drain region. The semiconductor device includes N channel MISFETs (Metal Insulator Semiconductor Field Effect Transistors) which are formed over a semiconductor substrate having a main surface with a (110) plane orientation and have a source region and a drain region at least one of which has thereover nickel silicide or a nickel alloy silicide. Of these NMISFETs, those having a channel width less than 400 nm are laid out so that their channel length direction is parallel to a crystal orientation.
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