发明申请
US20090080129A1 Semiconductor chips having improved electrostatic discharge protection circuit arrangement 有权
具有改善的静电放电保护电路布置的半导体芯片

  • 专利标题: Semiconductor chips having improved electrostatic discharge protection circuit arrangement
  • 专利标题(中): 具有改善的静电放电保护电路布置的半导体芯片
  • 申请号: US12292026
    申请日: 2008-11-10
  • 公开(公告)号: US20090080129A1
    公开(公告)日: 2009-03-26
  • 发明人: Ki-Tae LeeHan-Gu KimJae-Hyok Ko
  • 申请人: Ki-Tae LeeHan-Gu KimJae-Hyok Ko
  • 优先权: KR10-2006-0009389 20060131
  • 主分类号: H02H9/00
  • IPC分类号: H02H9/00 H01L23/62
Semiconductor chips having improved electrostatic discharge protection circuit arrangement
摘要:
A semiconductor chip may include a plurality of pads arranged in at least a first and a second row, and a plurality of protection circuits connected to the plurality of pads. The plurality of protection circuits may include at least one diode. A first protection circuit may be connected to a first pad in the first row of pads, and a second protection circuit may be connected to a second pad in the second row of pads. The first and second protection circuits may be arranged under the first row of pads.
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