Invention Application
- Patent Title: DEVICE CONTROLLING PHASE CHANGE STORAGE ELEMENT AND METHOD THEREOF
- Patent Title (中): 装置控制相变存储元件及其方法
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Application No.: US12142724Application Date: 2008-06-19
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Publication No.: US20090080243A1Publication Date: 2009-03-26
- Inventor: Pei-Chia Chiang , Shyh-Shyuan Sheu , Lieh-Chiu Lin , Wen-Pin Lin
- Applicant: Pei-Chia Chiang , Shyh-Shyuan Sheu , Lieh-Chiu Lin , Wen-Pin Lin
- Applicant Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- Priority: TWTW96135340 20070921
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Devices controlling a phase change storage element and methods for increasing reliability of a phase change storage element. The invention introduces a first operation mode and a second operation mode. A reference phase change storage element is forced a write current for an ideal conduction period in the first operation mode. In the second operation mode, the invention generates a proper conduction period based on the resistance of the reference phase change storage element, and forces the write current into the controlled phase change storage element for the proper conduction period.
Public/Granted literature
- US07796455B2 Device controlling phase change storage element and method thereof Public/Granted day:2010-09-14
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