发明申请
- 专利标题： MEMORY DEVICE INCLUDING RESISTANCE-CHANGING FUNCTION BODY
- 专利标题（中）： 包括电阻变化功能体的存储器件
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申请号： US12271837申请日： 2008-11-14
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公开(公告)号： US20090085025A1公开(公告)日： 2009-04-02
- 发明人: Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
- 申请人： Nobutoshi ARAI , Hiroshi Iwata , Seizo Kakimoto
- 优先权： JPP2002-273370 20020919; JPP2002-273384 20020919
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/265
摘要：
A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
公开/授权文献
- US07851777B2 Memory device including resistance-changing function body 公开/授权日：2010-12-14
信息查询
IPC分类:
