发明申请
US20090085065A1 METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL
审中-公开
使用波形焊接和基板去除在III面形成的层的N面上制造III-N半导体器件的方法
- 专利标题： METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL
- 专利标题（中）： 使用波形焊接和基板去除在III面形成的层的N面上制造III-N半导体器件的方法
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申请号： US12059907申请日： 2008-03-31
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公开(公告)号： US20090085065A1公开(公告)日： 2009-04-02
- 发明人: Umesh K. Mishra , Lee S. McCarthy , Chang Soo Suh , Siddharth Rajan
- 申请人： Umesh K. Mishra , Lee S. McCarthy , Chang Soo Suh , Siddharth Rajan
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/18 ; H01L21/20
摘要：
A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the III-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III-nitride semiconductor device structure. An N-polar (000-1) oriented III-nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group III-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group III-faces.