发明申请
- 专利标题: CHAMBER ISOLATION VALVE RF GROUNDING
- 专利标题(中): 室隔离阀射频接地
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申请号: US12333043申请日: 2008-12-11
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公开(公告)号: US20090090883A1公开(公告)日: 2009-04-09
- 发明人: Ke Ling Lee , Shinichi Kurita , Emanuel Beer
- 申请人: Ke Ling Lee , Shinichi Kurita , Emanuel Beer
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: F16K25/00
- IPC分类号: F16K25/00
摘要:
Embodiments described herein provide a method and apparatus for grounding a chamber isolation valve. In one embodiment, a grounded chamber isolation valve for a plasma processing system is described. The chamber isolation valve includes a door and a bracing member movably attached to and opposing the door, and at least one electrically conductive member in electrical communication with the door, the at least one electrically conductive member comprising one or more reaction bumpers disposed on the bracing member that are adapted to contact at least one grounded component of the plasma processing system when the door is in the closed position.
公开/授权文献
- US08327878B2 Chamber isolation valve RF grounding 公开/授权日:2012-12-11
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