发明申请
- 专利标题： SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 半导体器件，其制造方法和半导体衬底
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申请号： US12137578申请日： 2008-06-12
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公开(公告)号： US20090091039A1公开(公告)日： 2009-04-09
- 发明人: Toshitaka Akahoshi
- 申请人： Toshitaka Akahoshi
- 申请人地址： JP Kadoma-shi
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Kadoma-shi
- 优先权： JP2007-259297 20071003; JP2008-036748 20080219
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/00
摘要：
According to the present invention, for collective molding of semiconductor devices, a semiconductor substrate includes first electrodes formed on the front side, second electrodes formed on the back side and connected to external electrode terminals, and a plurality of semiconductor element mounting regions 203. Along partition lines 202 for partitioning the semiconductor substrate into the plurality of semiconductor element mounting regions 203, recessed portions 205 are formed on the partition lines 202 on the front side of the semiconductor substrate.
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