发明申请
- 专利标题： MEMORY CONFIGURATION OF A COMPOSITE MEMORY DEVICE
- 专利标题（中）： 复合存储器件的存储器配置
-
申请号： US12333674申请日： 2008-12-12
-
公开(公告)号： US20090091984A1公开(公告)日： 2009-04-09
- 发明人: Minoru FUKUDA , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
- 申请人： Minoru FUKUDA , Hiroaki Nakanishi , Kunio Matsudaira , Masahiro Matsuo , Hirohisa Abe
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JPJP9-149975 19970523
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of other flash memory array is enable when the plural sector flash memory array is gained access.
公开/授权文献
- US07672172B2 Memory configuration of a composite memory device 公开/授权日：2010-03-02
信息查询
