发明申请
US20090092367A1 Process of making a semiconductor optical lens and a semiconductor optical lens fabricated thereby
失效
制造半导体光学透镜和由此制造的半导体光学透镜的工艺
- 专利标题： Process of making a semiconductor optical lens and a semiconductor optical lens fabricated thereby
- 专利标题（中）： 制造半导体光学透镜和由此制造的半导体光学透镜的工艺
-
申请号： US11990876申请日： 2006-08-24
-
公开(公告)号： US20090092367A1公开(公告)日： 2009-04-09
- 发明人: Yoshiaki Honda , Takayuki Nishikawa , Tomohiro Kamitsu
- 申请人： Yoshiaki Honda , Takayuki Nishikawa , Tomohiro Kamitsu
- 申请人地址： JP Kadoma-shi, Osaka
- 专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人地址： JP Kadoma-shi, Osaka
- 优先权： JP2005-246778 20050826
- 国际申请： PCT/JP2006/317159 WO 20060824
- 主分类号： G02B6/10
- IPC分类号： G02B6/10 ; C25D7/12
摘要：
A semiconductor substrate with anode pattern is anodized to be shaped into an optical lens. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. After being removed of the porous layer, the substrate is treated to smooth out minute projections remaining in the top surface of the substrate, thereby obtaining the lens of good transmissivity.