Invention Application
- Patent Title: METHOD OF PRODUCING AN ASYMMETRIC ARCHITECTURE SEMI-CONDUCTOR DEVICE
- Patent Title (中): 生产不对称结构半导体器件的方法
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Application No.: US12244051Application Date: 2008-10-02
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Publication No.: US20090093079A1Publication Date: 2009-04-09
- Inventor: Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
- Applicant: Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Priority: FR0758018 20070102
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/02
Abstract:
A method is for producing an asymmetric architecture semi-conductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.
Public/Granted literature
- US07955914B2 Method of producing an asymmetric architecture semi-conductor device Public/Granted day:2011-06-07
Information query
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