发明申请
- 专利标题： Carrier Structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device
- 专利标题（中）： 叠层型半导体器件的载体结构及其制造方法以及叠层型半导体器件的制造方法
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申请号： US12315417申请日： 2008-12-03
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公开(公告)号： US20090093085A1公开(公告)日： 2009-04-09
- 发明人: Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
- 申请人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
- 主分类号： H01L21/71
- IPC分类号： H01L21/71 ; H01L23/48
摘要：
A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.
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