Invention Application
- Patent Title: SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
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Application No.: US11868553Application Date: 2007-10-08
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Publication No.: US20090093092A1Publication Date: 2009-04-09
- Inventor: DINH DANG , Thai Doan , Jessica Anne Levy , Max Gerald Levy , Alan Frederick Norris , James Albert Slinkman
- Applicant: DINH DANG , Thai Doan , Jessica Anne Levy , Max Gerald Levy , Alan Frederick Norris , James Albert Slinkman
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/283
Abstract:
A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
Information query
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