发明申请
US20090098740A1 METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE 失效
在半导体器件中形成隔离层的方法

METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE
摘要:
The invention discloses a method of forming an isolation layer in a semiconductor device. The method includes providing a semiconductor substrate having a trench formed therein; forming a first insulating layer in the trench; and forming a densified second insulating layer on the first insulating layer. In the above method, a void is not generated in the isolation layer so a bending phenomenon of an active region can be reduced or prevented to improve an electrical characteristic of the semiconductor.
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