发明申请
- 专利标题： METHODS FOR FABRICATING RESIDUE-FREE CONTACT OPENINGS
- 专利标题（中）： 用于制造无残留接触开口的方法
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申请号： US12341836申请日： 2008-12-22
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公开(公告)号： US20090104767A1公开(公告)日： 2009-04-23
- 发明人: Li Li
- 申请人： Li Li
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/74 ; H01L21/768 ; H01L21/302
摘要：
A two-step via cleaning process that removes metal polymer and oxide polymer residues from a via with substantially no damage to the via or underlying structures on a semiconductor substrate. The via is formed through a dielectric layer and a barrier layer that are disposed over a metal-containing trace disposed on a semiconductor substrate. The sidewalls of the via may be coated with a residue layer including a distinct oxide polymer component and a distinct metal polymer component. The two-step cleaning process comprises subjecting the residue layer to a nitric acid dip that removes the metal polymer component to expose the oxide polymer component. The oxide polymer component is then subjected to a phosphoric acid dip that removes the oxide polymer component. The oxide polymer and metal polymer residues may also be removed during the fabrication of the via by removing them directly after their respective formations.
公开/授权文献
- US07700497B2 Methods for fabricating residue-free contact openings 公开/授权日：2010-04-20