发明申请
US20090105867A1 Temperature control method, method of obtaining a temperature correction value, method of manufacturing a semiconductor device and substrate treatment apparatus 有权
温度控制方法,获得温度校正值的方法,制造半导体器件的方法和衬底处理设备

  • 专利标题: Temperature control method, method of obtaining a temperature correction value, method of manufacturing a semiconductor device and substrate treatment apparatus
  • 专利标题(中): 温度控制方法,获得温度校正值的方法,制造半导体器件的方法和衬底处理设备
  • 申请号: US12232007
    申请日: 2008-09-09
  • 公开(公告)号: US20090105867A1
    公开(公告)日: 2009-04-23
  • 发明人: Hideto Yamaguchi
  • 申请人: Hideto Yamaguchi
  • 申请人地址: JP Tokyo
  • 专利权人: Hitachi Kokusai Electric, Inc.
  • 当前专利权人: Hitachi Kokusai Electric, Inc.
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2007-272029 20071019; JP2008-187631 20080718
  • 主分类号: H01L21/02
  • IPC分类号: H01L21/02 G05D23/00 G05D23/19
Temperature control method, method of obtaining a temperature correction value, method of manufacturing a semiconductor device and substrate treatment apparatus
摘要:
In a temperature control method in which a target temperature is given in a thermal treatment furnace and plural heaters are controlled according to the target temperature, the correlation of the each heater and plural profile temperature sensors provided in the thermal treatment furnace is determined, a virtual temperature is calculated on the basis of the detection temperature of each profile temperature sensor and a weighting factor calculated from the correlation, and the each heater is controlled so that the virtual temperature is coincident with the target temperature.
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