发明申请
- 专利标题: LIGHT EMITTING DIODE
- 专利标题(中): 发光二极管
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申请号: US12203762申请日: 2008-09-03
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公开(公告)号: US20090108250A1公开(公告)日: 2009-04-30
- 发明人: Hwa Mok KIM , Dae Won KIM , Dae Sung KAL
- 申请人: Hwa Mok KIM , Dae Won KIM , Dae Sung KAL
- 申请人地址: KR Ansan-si
- 专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人地址: KR Ansan-si
- 优先权: KR10-2007-0108686 20071029
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.
公开/授权文献
- US07863599B2 Light emitting diode 公开/授权日:2011-01-04
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