发明申请
US20090108280A1 PIXEL STRUCTURE AND FABRICATION METHOD THEREOF 有权
像素结构和制造方法

  • 专利标题: PIXEL STRUCTURE AND FABRICATION METHOD THEREOF
  • 专利标题(中): 像素结构和制造方法
  • 申请号: US11951321
    申请日: 2007-12-05
  • 公开(公告)号: US20090108280A1
    公开(公告)日: 2009-04-30
  • 发明人: Shiun-Chang JanHan-Tu Lin
  • 申请人: Shiun-Chang JanHan-Tu Lin
  • 优先权: TW096140324 20071026
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00 H01L21/02
PIXEL STRUCTURE AND FABRICATION METHOD THEREOF
摘要:
A fabrication method of a pixel structure includes utilizing only a single photomask in two different lithographic processes for defining patterns of the source/drain and passivation layer respectively. Therefore, the total amount of photomasks of the fabrication process can be decreased.
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