发明申请
- 专利标题： INTEGRATION SCHEME FOR MULTIPLE METAL GATE WORK FUNCTION STRUCTURES
- 专利标题（中）： 多金属门工作功能结构的整合方案
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申请号： US11924053申请日： 2007-10-25
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公开(公告)号： US20090108356A1公开(公告)日： 2009-04-30
- 发明人: Kangguo Cheng , Michael P. Chudzik , Rama Divakaruni , Geng Wang , Robert C. Wong , Haining S. Yang
- 申请人： Kangguo Cheng , Michael P. Chudzik , Rama Divakaruni , Geng Wang , Robert C. Wong , Haining S. Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/44
摘要：
A metal gate stack containing a metal layer having a mid-band-gap work function is formed on a high-k gate dielectric layer. A threshold voltage adjustment oxide layer is formed over a portion of the high-k gate dielectric layer to provide devices having a work function near a first band gap edge, while another portion of the high-k dielectric layer remains free of the threshold voltage adjustment oxide layer. A gate stack containing a semiconductor oxide based gate dielectric and a doped polycrystalline semiconductor material may also be formed to provide a gate stack having a yet another work function located near a second band gap edge which is the opposite of the first band gap edge. A dense circuit containing transistors of p-type and n-type with the mid-band-gap work function are formed in the region containing the threshold voltage adjustment oxide layer.
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