发明申请
US20090110017A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
半导体发光元件及其制造方法

  • 专利标题: SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
  • 专利标题(中): 半导体发光元件及其制造方法
  • 申请号: US12275750
    申请日: 2008-11-21
  • 公开(公告)号: US20090110017A1
    公开(公告)日: 2009-04-30
  • 发明人: Masami Aihara
  • 申请人: Masami Aihara
  • 申请人地址: JP Tokyo
  • 专利权人: Alps Electric Co., Ltd.
  • 当前专利权人: Alps Electric Co., Ltd.
  • 当前专利权人地址: JP Tokyo
  • 优先权: JPJP2006-142926 20060523; JPPCT/JP2007/060449 20070522
  • 主分类号: H01S5/00
  • IPC分类号: H01S5/00 H01L21/02
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要:
A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, a refractive index gradient layer provided on a light extraction surface of the semiconductor layer, and a holding substrate bounded to an outer surface of the refractive index gradient layer with an adhesion layer interposed therebetween. A refractive index of the refractive index gradient layer is changed continuously or stepwise in a film thickness direction such that a semiconductor-layer-side refractive index is substantially equivalent to a refractive index of the semiconductor layer and a holding-substrate-side refractive index is substantially equivalent to a refractive index of the holding substrate. The refractive index gradient layer is formed by vapor plating.
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