The present invention provides a pattern formation method comprising a step of forming on a substrate a film of a first photosensitive material having low sensitivity to a light beam with a main wavelength at h-line emitted from a mask-less drawing exposure apparatus but having high sensitivity to an energy light beam containing ultraviolet light; a step of forming on the first photosensitive material a film of a second photosensitive material having higher sensitivity to a light beam with the main wavelength at h-line; a step of drawing a second pattern on the second photosensitive material with the mask-less direct drawing exposure apparatus; a step of developing the second photosensitive material; and a step of exposing to a light beam the second photosensitive material with the second pattern formed thereon and the first photosensitive material in batch to form a target first pattern on the first photosensitive material.