Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.