发明申请
- 专利标题: TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR)
- 专利标题(中): 使用电影大音量谐振器(FBAR)的谐振器
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申请号: US12048481申请日: 2008-03-14
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公开(公告)号: US20090115553A1公开(公告)日: 2009-05-07
- 发明人: Jea-shik SHIN , Yun-kwon Park , In-sang Song , Duck-hwan Kim , Chul-soo Kim
- 申请人: Jea-shik SHIN , Yun-kwon Park , In-sang Song , Duck-hwan Kim , Chul-soo Kim
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-111060 20071101
- 主分类号: H03H9/54
- IPC分类号: H03H9/54
摘要:
A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.
公开/授权文献
- US07804382B2 Tunable resonator using film bulk acoustic resonator (FBAR) 公开/授权日:2010-09-28
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