发明申请
US20090117313A1 AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM
有权
AG基体合金薄膜和溅射靶材,用于形成AG基体合金薄膜
- 专利标题: AG BASE ALLOY THIN FILM AND SPUTTERING TARGET FOR FORMING AG BASE ALLOY THIN FILM
- 专利标题(中): AG基体合金薄膜和溅射靶材,用于形成AG基体合金薄膜
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申请号: US12342507申请日: 2008-12-23
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公开(公告)号: US20090117313A1公开(公告)日: 2009-05-07
- 发明人: Yuuki TAUCHI , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
- 申请人: Yuuki TAUCHI , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
- 申请人地址: JP Kobe-shi
- 专利权人: KABUSHIKI KAISHA KOBE SEIKO SHO
- 当前专利权人: KABUSHIKI KAISHA KOBE SEIKO SHO
- 当前专利权人地址: JP Kobe-shi
- 优先权: JP2002-231596 20020808; JP2002-233283 20020809; JP2002-239972 20020820; JP2002-361117 20021212; JP2003-003643 20030109; JP2003-004586 20030110; JP2003-122314 20030425
- 主分类号: B32B3/02
- IPC分类号: B32B3/02
摘要:
The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.