发明申请
- 专利标题: SEMICONDUCTOR INTERCONNECTION STRUCTURE AND METHOD FOR MAKING THE SAME
- 专利标题(中): 半导体互连结构及其制造方法
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申请号: US11934005申请日: 2007-11-01
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公开(公告)号: US20090117731A1公开(公告)日: 2009-05-07
- 发明人: Chen-Hua Yu , Shau-Lin Shue , Chien-Hsueh Shih , Ming-Shih Yeh , Ming-Han Lee
- 申请人: Chen-Hua Yu , Shau-Lin Shue , Chien-Hsueh Shih , Ming-Shih Yeh , Ming-Han Lee
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A semiconductor interconnection structure is manufactured as follows. First, a substrate with a first dielectric layer and a second dielectric layer is formed. Subsequently, an opening is formed in the second dielectric layer. A thin metal layer and a seed layer are formed in sequence on the surface of the second dielectric layer in the opening, wherein the metal layer comprises at least one metal species having phase segregation property of a second conductor. The wafer of the substrate is subjected to a thermal treatment, by which most of the metal species in the metal layer at a bottom of the opening is diffused to a top surface of the second conductor to form a metal-based oxide layer. Afterwards, the wafer is subjected to planarization, so as to remove the second conductor outside the opening.