发明申请
- 专利标题： IN SM OXIDE SPUTTERING TARGET
- 专利标题（中）： 氧化硅溅射靶
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申请号： US11995640申请日： 2006-06-21
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公开(公告)号： US20090121199A1公开(公告)日： 2009-05-14
- 发明人: Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
- 申请人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
- 优先权： JP2005-207513 20050715; JP2005-258740 20050907
- 国际申请： PCT/JP2006/312412 WO 20060621
- 主分类号： H01B1/08
- IPC分类号： H01B1/08 ; B28B1/00 ; B29C43/02 ; C07F17/00
摘要：
A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
公开/授权文献
- US07648657B2 In Sm oxide sputtering target 公开/授权日：2010-01-19
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