发明申请
US20090121231A1 THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME
审中-公开
薄膜晶体管，其制造方法和使用其的有机发光二极管器件
- 专利标题： THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME
- 专利标题（中）： 薄膜晶体管，其制造方法和使用其的有机发光二极管器件
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申请号： US12270242申请日： 2008-11-13
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公开(公告)号： US20090121231A1公开(公告)日： 2009-05-14
- 发明人: Kyoung-Bo KIM , Yong-Woo Park , Chang-Young Jeong , Sung-Won Doh , Dae-Woo Lee , Jong-Mo Yeo
- 申请人： Kyoung-Bo KIM , Yong-Woo Park , Chang-Young Jeong , Sung-Won Doh , Dae-Woo Lee , Jong-Mo Yeo
- 申请人地址： KR Suwon-si
- 专利权人： Samsung SDI Co., Ltd.
- 当前专利权人： Samsung SDI Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2007-115553 20071113
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/336
摘要：
Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.
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