发明申请
US20090124069A1 METHODS OF CHANGING THRESHOLD VOLTAGES OF SEMICONDUCTOR TRANSISTORS BY ION IMPLANTATION
有权
通过离子注入改变半导体晶体管的阈值电压的方法
- 专利标题： METHODS OF CHANGING THRESHOLD VOLTAGES OF SEMICONDUCTOR TRANSISTORS BY ION IMPLANTATION
- 专利标题（中）： 通过离子注入改变半导体晶体管的阈值电压的方法
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申请号： US11939578申请日： 2007-11-14
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公开(公告)号： US20090124069A1公开(公告)日： 2009-05-14
- 发明人: William F. Clark, JR. , Edward Joseph Nowak
- 申请人： William F. Clark, JR. , Edward Joseph Nowak
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method for forming a semiconductor structure. The method includes providing a semiconductor structure including a semiconductor substrate. The semiconductor substrate includes (i) a top substrate surface which defines a reference direction perpendicular to the top substrate surface and (ii) a semiconductor body region. The method further includes implanting an adjustment dose of dopants of a first doping polarity into the semiconductor body region by an adjustment implantation process. Ion bombardment of the adjustment implantation process is in the reference direction. The method further includes (i) patterning the semiconductor substrate resulting in side walls of the semiconductor body region being exposed to a surrounding ambient and then (ii) implanting a base dose of dopants of a second doping polarity into the semiconductor body region by a base implantation process. Ion bombardment of the base implantation process is in a direction which makes a non-zero angle with the reference direction.