发明申请
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12010111申请日: 2008-01-22
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公开(公告)号: US20090127605A1公开(公告)日: 2009-05-21
- 发明人: Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
- 申请人: Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
- 申请人地址: JP Kariya-city
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya-city
- 优先权: JP2007-15183 20070125; JP2007-73316 20070320
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/66
摘要:
A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
公开/授权文献
- US07821069B2 Semiconductor device and method for manufacturing the same 公开/授权日:2010-10-26