发明申请
- 专利标题： Method of Forming a Magnetic Tunnel Junction Structure
- 专利标题（中）： 形成磁隧道结结构的方法
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申请号： US11943042申请日： 2007-11-20
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公开(公告)号： US20090130779A1公开(公告)日： 2009-05-21
- 发明人: Xia Li , Seung H. Kang , Xiaochun Zhu
- 申请人： Xia Li , Seung H. Kang , Xiaochun Zhu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.
公开/授权文献
- US09136463B2 Method of forming a magnetic tunnel junction structure 公开/授权日：2015-09-15
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