发明申请
US20090144035A1 Black box model for large signal transient integrated circuit simulation 有权
黑匣子模型用于大信号瞬态集成电路仿真

Black box model for large signal transient integrated circuit simulation
摘要:
A modified “black box” integrated circuit simulation model is provided that is based only upon on the external steady-state and transient characteristics of a device under test (DUT). The method utilizes probe pulses as well as steady-state I-V and C-V look-up tables. In contrast to conventional black box simulation models, which support only steady-state and small signal frequency analysis, the disclosed method also supports large signal transient analysis.
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