发明申请
- 专利标题： MECHANICAL MEMORY TARNSISTOR
- 专利标题（中）： 机械记忆仪
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申请号： US11951535申请日： 2007-12-06
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公开(公告)号： US20090146226A1公开(公告)日： 2009-06-11
- 发明人: Carl O. Bozler
- 申请人： Carl O. Bozler
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
公开/授权文献
- US08704314B2 Mechanical memory transistor 公开/授权日：2014-04-22
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